Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118020 | Materials Science in Semiconductor Processing | 2018 | 5 Pages |
Abstract
One-dimensional β-Ga2O3 nanostructures were grown at different temperatures on c-plane sapphire substrates by MOCVD using Au as catalyst. The structural, morphological and photoluminescence properties of β-Ga2O3 nanostructures grown at different temperatures were characterized and compared in detail. As the growth temperature was increased, β-Ga2O3 nanostructures exhibited improved crystalline quality and possessed a typical β-Ga2O3 structure with high purity. The β-Ga2O3 nanostructures grown at 750 °C showed intense ultraviolet-blue emission at room temperature. Different morphologies including islands-like, nanowires, nanorods, grain-like structures were obtained depending on the growth temperature. The correlation between the nanostructures shapes and the growth processes was also discussed.
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Authors
Daqiang Hu, Shiwei Zhuang, Xin Dong, Guotong Du, Baolin Zhang, Yuantao Zhang, Jingzhi Yin,