Influence of the mesa electrode position on monolithic on-chip series-interconnect GaAs laser power converter performance

According to the theoretical models of the two structures, the root cause is that structure1 has a lower series resistance. Additional simulated results show that when the base doping concentration is higher than 5.1 × 1016 cm−3, structure1 has a smaller series resistance and better performance characteristics. According to the conclusions in this study, we can further improve the output performance of laser power converters, especially in larger area laser power converters.