Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118163 | Materials Science in Semiconductor Processing | 2018 | 7 Pages |
Abstract
The diffusion layer thickness of impurity during directional solidification process was evaluated under different temperature gradient conditions. The thickness of Fe, Cu, Ni and Ti in silicon ingot under 9.74Â K/m were 6.19Â mm, 4.92Â mm, 4.61Â mm and 8.70Â mm, respectively; The thickness of Fe, Cu, Ni and Ti in silicon ingot under 28.49Â K/m were reduced to 3.35Â mm, 1.21Â mm, 1.85Â mm and 5.81, respectively. The diffusion layer thickness was reduced by the large temperature gradient to lead a low effective segregation coefficient. As a result, the impurity concentration of silicon ingot under 28.49Â K/m was reduced to 0.94Â ppmw. The strong vortex in the solid-liquid boundary interface was enhanced by the large temperature gradient, as the main transport mechanism to accelerate the diffuse of impurity atom in the diffusion layerï¼which effectively reduced the thickness of diffusion layer.
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Authors
Shiqiang Ren, Yi Tan, Dachuan Jiang, Pengting Li, Jiayan Li,