The electrical properties and distribution of indium in germanium crystals

Indium doped germanium crystals were grown in a hydrogen atmosphere using the Czochralski method. The electrical properties of indium doped germanium crystals were measured by Hall effect at 77 K. The axial and radial distributions of indium in the germanium crystals were investigated. The effective segregation coefficient of indium in germanium is determined to be 0.0009 with the concentration of indium from 3 × 1012~1 × 1019 cm−3. The interface shape between melt and crystal determined the radial distribution of indium in germanium crystals.