| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7118255 | Materials Science in Semiconductor Processing | 2018 | 6 Pages |
Abstract
The effects of the vacancy-related defects introduced by neutron irradiation on oxygen precipitation in Czochralski silicon have been elaborately investigated. It is found that the vacancy-related defects significantly enhance the nucleation of oxygen precipitates as well as the growth of the grown-in oxygen precipitates. The Ostwald ripening of oxygen precipitates in neutron-irradiated silicon wafers is observed during a low-high two-step annealing. It is interpreted that the vacancy-related defects facilitate the formation of platelet-like oxygen precipitates, which continue to grow at the expense of small-sized oxygen precipitates during the high temperature annealing process. However, when subjected to the subsequent rapid thermal annealing at higher temperature, the platelet-like oxygen precipitates in the neutron-irradiated silicon exhibit lower stability due to the large surface free energy.
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Authors
Peng Wang, Can Cui, Xuegong Yu, Deren Yang,