| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7118576 | Materials Science in Semiconductor Processing | 2016 | 4 Pages |
Abstract
We report on Ga2O3 deposition on c-plane sapphire substrates by hydride vapour phase epitaxy using metallic gallium, hydrogen chloride and dry air as precursors. High deposition rate up to 250 µm/h has been realized. As confirmed by X-ray diffraction and micro-Raman measurements, produced films consisted of pure monoclinic β-Ga2O3 phase and were (â201) oriented. The full width at half maximum (FWHM) for (â201) rocking curve was decreasing with increasing GaCl flow. The narrowest FWHM of 20 arcmin has been detected.
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Electrical and Electronic Engineering
Authors
V.I. Nikolaev, A.I. Pechnikov, S.I. Stepanov, I.P. Nikitina, A.N. Smirnov, A.V. Chikiryaka, S.S. Sharofidinov, V.E. Bougrov, A.E. Romanov,