Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118705 | Materials Science in Semiconductor Processing | 2015 | 5 Pages |
Abstract
Complete admittance expressions, adapted from the equations previously presented for Metal/Oxide/Semiconductor (MOS) structure, were derived and modified admittance approach was successfully applied on a-Si:H/c-Si heterojunction to deduce surface state density (Nss) by employing capacitance-voltage (C-V) and conductance-voltage (G/Ï-V) measurements. Through the approach, Nss was determined as 6Ã1012Â cmâ2Â eVâ1 that was mutually checked by continuum model, used previously for evaluating Nss in MOS structure. Furthermore, locating such an amount at the interface of a-Si:H and c-Si, experimentally measured C-V curve was reproduced through AFORS-HET simulation program. Presence of such a large amount of Nss was originated due to native oxide layer, confirmed through spectroscopic elipsometry measurement.
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Authors
Ugur Deneb Menda, Orhan Ãzdemir,