Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118760 | Materials Science in Semiconductor Processing | 2015 | 6 Pages |
Abstract
Manganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn]=1%, 2% and 3% in addition to pure Mn3O4. Beyond classical characterization techniques, effects of Zr-doping were studied in reference to the expected use in rechargeable batteries and sensing devices. Moreover, additional opto-thermal investigation and analyses of the Lattice Compatibility Theory led to a founded understanding to the dynamics of Zirconium ion incorporation inside Mn3O4 host matrices.
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Authors
L. Ben Said, T. Larbi, A. Yumak, K. Boubaker, M. Amlouk,