Article ID Journal Published Year Pages File Type
7118783 Materials Science in Semiconductor Processing 2015 5 Pages PDF
Abstract
The electronic and optical properties of SnSb4S7 compound are calculated by the full-potential linearized augmented plane-wave (FP-LAPW) method. The density of states (DOS) is carried out by the modified Becke-Johnson (mBJ) exchange potential approximation based on density functional theory (DFT). The compound SnSb4S7 has a monoclinic structure with the space group P21/m with lattice parameters of a=11.331 Å, b=3.865 Å and c=13.940 Å. The band gap is calculated to be 0.8 eV. The optical parameters, like dielectric constant, refractive index, reflectivity and energy loss function were also calculated and analyzed. The present work provides information about variation of the electronic and optical properties which reveals that SnSb4S7 is suitable for optoelectronic devices.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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