Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118834 | Materials Science in Semiconductor Processing | 2015 | 6 Pages |
Abstract
We report on fabrication of CuxFe1âxS2 (CFS) thin films using chemical spray pyrolysis followed by post-sulfurization. Post-sulfurized CFS films were grown with compact and good crystalline texture. The sulfur stoichiometry in CFS films was found to be crucial for determination of its crystal structure. The sulfur deficient CFS films were driven to chalcopyrite CFS (CH-CFS) structure whereas the sulfur cured CFS films were grown with Cu-incorporated pyrite CFS (P-CFS) structure which was confirmed by X-ray diffraction and Raman spectroscopy analysis along with UV-vis spectroscopy measurement. Electrical characterizations of both types of CFS films revealed p-type conductivity with carrier concentration in the range of 1018-1020Â cmâ3 and mobility of 0.5-9Â cm2Â Vâ1Â sâ1. The band gaps of CFS films of CH-CFS structure (0.885-0.949Â eV) were found to be less than that of P-CFS structure (0.966-1.156Â eV), which indicates its potential application for thermoelectric and photovoltaic devices.
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Engineering
Electrical and Electronic Engineering
Authors
Tanka Raj Rana, Dhruba B. Khadka, JunHo Kim,