Article ID Journal Published Year Pages File Type
7118834 Materials Science in Semiconductor Processing 2015 6 Pages PDF
Abstract
We report on fabrication of CuxFe1−xS2 (CFS) thin films using chemical spray pyrolysis followed by post-sulfurization. Post-sulfurized CFS films were grown with compact and good crystalline texture. The sulfur stoichiometry in CFS films was found to be crucial for determination of its crystal structure. The sulfur deficient CFS films were driven to chalcopyrite CFS (CH-CFS) structure whereas the sulfur cured CFS films were grown with Cu-incorporated pyrite CFS (P-CFS) structure which was confirmed by X-ray diffraction and Raman spectroscopy analysis along with UV-vis spectroscopy measurement. Electrical characterizations of both types of CFS films revealed p-type conductivity with carrier concentration in the range of 1018-1020 cm−3 and mobility of 0.5-9 cm2 V−1 s−1. The band gaps of CFS films of CH-CFS structure (0.885-0.949 eV) were found to be less than that of P-CFS structure (0.966-1.156 eV), which indicates its potential application for thermoelectric and photovoltaic devices.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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