Electrical conduction mechanisms of CdTe quantum dots/p-si heterojunction

CdTe quantum dots (QDs) are prepared on p-Si substrates using thermal evaporation technique. Current-voltage (I-V) characteristics of Au/CdTe QDs/p-Si/Al heterojunction are measured in a temperature range 304-368 K. The results show that the device has a rectification behavior with a rectification ratio being 275 at ±1.5 V. We determine the electrical conduction mechanisms of the heterojunction. At forward voltages V<0.3 V, the thermionic emission becomes the main mechanism, where in this voltage range, it is possible to estimate the barrier height and the ideality factor. At a forward voltage range 0.5