Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118856 | Materials Science in Semiconductor Processing | 2015 | 8 Pages |
Abstract
Cu-based semiconductors Cu2FeSnSe4 (CFTSe) and Cu(In, Al)Se2 (CIAS) have been fabricated using radio-frequency magnetron sputtering combined with rapid thermal selenization processing. For CFTSe, the heating rate ranging from 60 to 150 °C/min results in a difference in structure, morphology and optical properties. Thin film exhibits a pure phase structure, smooth surface and a band gap of 1.19 eV as the heating rate elevated to 90 °C/min. Furthermore, the CFTSe thin film selenized at 90 °C/min own the smallest value of cell volume compared with the others samples, which represents a more stable structure. In terms of the other Cu-based material CIAS, three different selenization pressures, i.e., 1, 5 and 10 Torr, have been employed for CIAS preparation. Thin film transforms into single phase with dense morphology along with the pressure of 1 Torr. The diverse band gap of CIAS thin films from 1.34 to 2.18 eV attribute to two reasons: (i) the various Al content will affect the hybridization degree of Al-Se, and finally tunes the band structure, (ii) amounts of CuSe has a certain degree of effect on the band gap of the CIAS. In addition, the electrical properties of CFTSe and CIAS are also researched with the open circuit voltage (Voc) of 94 and 365 mV, respectively, signifying potential applications of CFTSe and CIAS for the thin film solar cells.
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Authors
Xiankuan Meng, Huiyi Cao, Hongmei Deng, Wenliang Zhou, Jun Zhang, Ling Huang, Lin Sun, Pingxiong Yang, Junhao Chu,