| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7118912 | Materials Science in Semiconductor Processing | 2015 | 10 Pages |
Abstract
At midgap all four considered methods give similar values. Terman׳s method appears to give substantially overestimated values of Dit for energies other than that of the midgap, owing to the charging of the internal interface between the higk-k layer and the interfacial SiOxNy layer.
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Authors
N. Novkovski,