Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7118969 | Materials Science in Semiconductor Processing | 2015 | 10 Pages |
Abstract
The electrical characteristics of Al/strained Si-on-insulator (sSOI) Schottky diode have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the wide temperature range of 200-400Â K in steps of 25Â K. It was found that the barrier height (0.57-0.80Â eV) calculated from the I-V characteristics increased and the ideality factor (1.97-1.28) decreased with increasing temperature. The barrier heights determined from the C-V measurements were higher than those extracted from the I-V measurements, associated with the formation of an inhomogeneous Schottky barrier at the interface. The series resistance estimated from the forward I-V characteristics using Cheung and Norde methods decreased with increasing temperature, implying its strong temperature dependence. The observed variation in barrier height and ideality factor could be attributed to the inhomogeneities in Schottky barrier, explained by assuming Gaussian distribution of barrier heights. The temperature-dependent I-V characteristics showed a double Gaussian distribution with mean barrier heights of 0.83 and 1.19Â eV and standard deviations of 0.10 and 0.16Â eV at 200-275 and 300-400Â K, respectively. From the modified Richardson plot, the modified Richardson constant were calculated to be 21.8 and 29.4Â AÂ cmâ2Â Kâ2 at 200-275 and 300-400Â K, respectively, which were comparable to the theoretical value for p-type sSOI (31.6Â AÂ cmâ2Â Kâ2).
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
I. Jyothi, V. Janardhanam, Hyobong Hong, Chel-Jong Choi,