| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119055 | Materials Science in Semiconductor Processing | 2015 | 7 Pages |
Abstract
Measurements of X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM) were used to identify the phases present in the CTS and CZTS films as well as to study their structural and morphological properties. Further, the oxidation states and the chemical composition homogeneity in the volume were studied by X-ray photoelectron spectroscopy (XPS) analysis. Oxidation states and results regarding structural and morphological characterization of CZTS films prepared using the novel technique are compared with those results obtained from single phase CZTS films prepared by sequential evaporation of metallic precursors in presence of elemental sulfur. XRD and Raman spectroscopy studies were used to verify that the CZTS films prepared by the novel method do not present secondary phases.
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Authors
C. Calderón, G. Gordillo, R. Becerra, P. Bartolo-Pérez,