| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119204 | Materials Science in Semiconductor Processing | 2015 | 6 Pages |
Abstract
In this work, we present some physical properties of Sb2S2O thin films obtained through heat treatment of Sb2S3 thin films under an atmospheric pressure at 350 °C. The electrical conductivity, dielectric properties and relaxation model of these thin films were studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at various temperatures from 350 °C to 425 °C. Besides, the frequency and temperature dependence of the complex impedance, AC conductivity and complex electric modulus has been investigated.
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Authors
M. Haj Lakhdar, T. Larbi, B. Ouni, M. Amlouk,