| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119230 | Materials Science in Semiconductor Processing | 2015 | 6 Pages |
Abstract
Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C61-Butyric acid-Methyl-Ester (PCBM) and fullerene (C60) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C60 device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C60 to P3HT:PCBM blend gave a high value for RRESET/RSET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C60 to P3HT layer.
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Authors
P. Aruna, K. Suresh, C.M. Joseph,