A high-selective positive-type developing technique for phase-change inorganic resist Ge2Sb2(1−x)Bi2xTe5

Recently chalcogenide phase-change resist Ge2Sb2(1−x)Bi2xTe5, which is compatible in next generation full-vacuum microelectronic manufacturing, has been paid much more attention due to the its excellent properties, such as high etching selectivity between Si and Ge2Sb2(1−x)Bi2xTe5 (about 500), wide spectral absorption and able to be prepared in vacuum. However, the very low developing selectivity (lower than 5) between its crystalline and amorphous phase limits its application in lithography. Here we developed a novel high-selective developing method to significantly improve the selectivity up to 22 (5 times than before), which enables the inorganic resist to be workability. Moreover, the developing mechanism is revealed, and this is helpful to dry developing technology of Ge2Sb2(1−x)Bi2xTe5.