Connecting bulk properties of germanium with the behavior of self- and dopant diffusion

The understanding of self- and dopant diffusion properties over a range of temperatures and pressures can be technologically important for the formation of defined and efficient nanoelectronic devices. Phosporous, Arsenic and antimony are n-type dopants that can be considered for n-channel germanium metal oxide semiconductor field effect transistors. Using recent experimental data we show that elastic and expansivity data can reproduce the self-diffusion and n-type dopant diffusion coefficient of germanium in the temperature range 702-1177 K. This is achieved in the framework of the cBΩ model, which assumes that the defect Gibbs energy is proportinal to the isothermal bulk modulus and the mean volume per atom.