| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119554 | Materials Science in Semiconductor Processing | 2014 | 5 Pages |
Abstract
In addition I-V measurements of the Al/oc-ZnPc/p-Si/Al were repeated under light which had illumination intensity of 40-100Â mW/cm2. It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications.
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Authors
Enise Ozerden, Mustafa Yildiz, Yusuf Selim Ocak, Ahmet Tombak, Tahsin Kilicoglu,