Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices

In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (Jr-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the Jr-V plot behaviors are given by linear dependence between In ( Jr) and V1/2, where Jr is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.