| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119652 | Materials Science in Semiconductor Processing | 2014 | 6 Pages |
Abstract
An Au/n-InP/In diode has been fabricated in the laboratory conditions and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 °C for 3 min in N2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I-V and reverse bias C-V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode.
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Electrical and Electronic Engineering
Authors
Tuba Ãakıcı, Mustafa SaÄlam, Betül Güzeldir,