| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119690 | Materials Science in Semiconductor Processing | 2014 | 5 Pages |
Abstract
We report photoluminescence (PL) of indium phosphide (InP) surface passivated by sulfur (S). A three-fold enhancement of band edge emission from the bulk InP was observed after the InP was passivated by ammonium sulfide ((NH4)2S) solution for 10Â min. X-ray photoelectron spectroscopy measurements indicate that the oxide at InP surface is removed after being sulfurized in (NH4)2S solution. However, the enhancement significantly decreases for a longer treatment time, which is maybe due to a thick S layer deposited at the InP surface resulting in low light transmission.
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Authors
Shanshan Tian, Zhipeng Wei, Yongfeng Li, Haifeng Zhao, Xuan Fang, Jilong Tang, Dan Fang, Lijuan Sun, Guojun Liu, Bin Yao, Xiaohui Ma,