| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7119774 | Materials Science in Semiconductor Processing | 2014 | 5 Pages |
Abstract
Thin films of Fe and Cu-codoped CdO (CdO:Cu:Fe) with different Fe content and fixed Cu content were deposited in a high vacuum on glass and Si wafer substrates. These films were studied by X-ray fluorescence (XRF), X-ray diffraction (XED), optical spectroscopy, and dc-electrical measurements. The structural results show enhancement of film [1Â 1Â 1] orientation with Fe doping especially with 1.3%Fe film. Also, light doping with Fe improves the dc-conduction parameters of the CdO:Cu:Fe films so that the utmost enhancement of mobility (90.5Â cm2/Vs) and conductivity (1470.6Â S/cm) was found with 1.3Â wt% Fe doping level. It was found that the variation in the bandgap is related to the variation in electron concentration that caused by Fe doping. For low Fe ion concentration (<1.3Â wt% ), the bandgap varies according to the Moss-Burstein model.
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Authors
A.A. Dakhel,