Simulation analysis of the influence of leakage resistance on 1-10-100 TΩ guarded resistance transfer devices accuracy

Accuracy of high resistance transfer devices is very much dependent on insulation leakage. The subject of this paper is a digital analysis of the influence of insulation leakage on 1-10-100 TΩ guarded transfer device. The aim of this analysis is to minimize the errors of guarded resistance transfer devices caused by insulation leakage. The effects of the choice of the values of guarding resistors and their arrangement in the devices on transfer accuracy has been examined. Moreover, the influence of a decrease of the insulation resistance value was probed. The results of the research clearly indicate that a proper selection of guarding resistor values can improve the accuracy of the guarded transfer device. Also appropriate arrangement of the main and guarding resistors in transfer devices allows a decrease in errors of the transfer devices.