High immunity wafer-level measurement of MHz current

Wafer-level characterization of functional prototypes of solid state current sensors is usually the first step in the development stage, therefore a dedicated wafer-level measurement systems are required. Especially for MHz characterization, where electromagnetic interference issues became strongly relevant. Thus, for frequencies above 1 MHz, a sophisticated measurement techniques are needed, because parasitic couplings can significantly affect sensor response and other signal processing stages, causing errors or malfunction of the whole system. We propose technique for high immunity MHz current measurement by solid state sensor in wafer-level configuration. The system is especially well-suited for MHz characterization, where electromagnetic interference issues become highly relevant. We showed that balanced transmission provides possibility to reduce interference in the sensor biasing circuit of about 60 dB compared to single-ended method. The effectiveness of the proposed technique was tested in monitoring MHz current in the external line by single magnetoresistive sensors on wafer level.