Non-contact temperature measurement of silicon wafers based on the combined use of transmittance and radiance

For a semitransparent wafer, the measurement of p-polarized transmittance at the wavelengths of 1.1, 1.2 and 1.3 μm enables temperature measurement in the range from room temperature to 600 °C. For an opaque wafer above 600 °C, the p-polarized radiation thermometry at the wavelength of 4.5 μm allows the temperature measurement without the emissivity problem. The combined method with the use of transmittance and radiance is valid in the entire temperature range irrespective of variations of film thickness and resistivity.