Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7130909 | Optics & Laser Technology | 2013 | 5 Pages |
Abstract
GaN-based light-emitting diodes (LEDs) with discontinuous n-electrode and reflective p-electrode structure was fabricated and investigated. At 350-mA injection current, the LED with low optical loss n-electrode structure exhibited a 2.5% higher light output power than that of the LED with conventional n-electrode structure. This enhancement in light output power was attributed to the reduced loss of active region area. The LED with reflective p-electrode exhibited a 4.1% higher light output power than that of the LED with conventional p-electrode structure, which is attributed to the reduced light absorption by the opaque p-electrode. It was also found that the 350-mA forward voltage only increased slightly for the LED with discontinuous n-electrode and reflective p-electrode structure compared to the LED with conventional electrode structure.
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Electrical and Electronic Engineering
Authors
Shengjun Zhou, Shufang Wang, Sheng Liu, Han Ding,