High power GaN-based LEDs with low optical loss electrode structure

GaN-based light-emitting diodes (LEDs) with discontinuous n-electrode and reflective p-electrode structure was fabricated and investigated. At 350-mA injection current, the LED with low optical loss n-electrode structure exhibited a 2.5% higher light output power than that of the LED with conventional n-electrode structure. This enhancement in light output power was attributed to the reduced loss of active region area. The LED with reflective p-electrode exhibited a 4.1% higher light output power than that of the LED with conventional p-electrode structure, which is attributed to the reduced light absorption by the opaque p-electrode. It was also found that the 350-mA forward voltage only increased slightly for the LED with discontinuous n-electrode and reflective p-electrode structure compared to the LED with conventional electrode structure.