Reactive-sputtered transparent MoO3 film for high-performing infrared Si photoelectric devices

In this work, a high-performing infrared photodetector is achieved using a MoO3/p-Si heterojunction. A high-quality MoO3 film is formed using the sputtering method, which enables the application of large-scale MoO3 film-embedded Si devices. A partial oxygen flow is effective to form the (001) preferential growth of the MoO3 film. The MoO3/Si heterojunction is applied for use in a long wavelength (1100 nm) photodetector to provide a fast rise time (72.32 ms) and fall time (68.15 ms). The optically transparent MoO3 film is effective for allowing incoming light into the Si and efficiently collecting the photogenerated carriers. In addition, the transparent MoO3 film also serves as an anti-reflection coating layer allowing 7.89% reflection for broad wavelengths. MoO3 is effective at harvesting infrared photons. Thus, the functional uses of a MoO3 film would significantly enhance Si-based photoelectric devices, including solar cells and photodetectors.