Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7133995 | Sensors and Actuators A: Physical | 2018 | 8 Pages |
Abstract
The 2D layers of MoS2 were deposited at RT, 200â°C and 400â°C over p-Si substrates using RF sputtering method. When the deposition temperature is increased beyond 200â°C, the MoS2 layers were grown in vertical direction. XRD studies revealed that the prominent peak is shifted from 2θâ=â24° to 13.5° and become narrow while increasing the temperature to 400â°C. The average absorption of 53.68% was exhibited by the sample deposited at 400â°C whereas it was reduced to 28.47% for the sample prepared at 200â°C. When the MoS2/p-Si photodetector was exposed to the red color wavelength, the high photocurrent of 130âμA was produced even at zero bias. The response and recovery times were measured as 38.78âμs and 43.07âμs respectively for λâââ455ânm. The detectivity was found to be in the range of 109-1010 Jones. The proposed MoS2 based photodetector is more beneficial in terms of quick transport of photogenerated carriers and fast response. The growth control and large-scale production of 2D materials would induce the enhanced photoelectric performances and practical device applications.
Related Topics
Physical Sciences and Engineering
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Electrochemistry
Authors
Hong-Sik Kim, Melvin David Kumar, Joondong Kim, Donggun Lim,