Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7136127 | Sensors and Actuators A: Physical | 2015 | 28 Pages |
Abstract
In this paper we describe the development of four different amorphous silicon based pixn multispectral photodetectors and discuss their optical characteristics as a result of extensive bandgap engineering. Upcoming from a sensor structure providing narrow band absorption peaks between 450Â nm and 540Â nm with a maximum applied bias of â12Â V, we developed bias optimized detectors with increased bandwidth by changing the composition and thickness of the absorbing material. By applying just â2.5Â V, one sensor obtains almost a Gaussian spectral response with peaks ranging from 420Â nm to 580Â nm. We present a specific algorithm to simulate color recognition probabilities for 20 different whitish powders by using two similar detectors. For the sensor providing sensitivity maxima reaching from 450Â nm to 600Â nm with sampling peaks in the range between 400Â nm and 670Â nm, the simulation discloses enhanced recognition probabilities of more than 70.2%, requiring a readout time of at least 15.5Â ms. As assumed, the competetive sensor structure providing just a sampling bandwidth between 420Â nm and 630Â nm achieves recognition probabilities of 62.5% with a reduced readout time of only 6.1Â ms. Possible sensor applications may exist in fields of fluorescence and spectrophotometric measurements, in chemical analysis, medical diagnostics or in colorimetric and multispectral imagery.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Daniel S. Schneider, Christian Merfort, Andreas Bablich,