Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7136291 | Sensors and Actuators A: Physical | 2015 | 8 Pages |
Abstract
This paper presents the performance of a silicon-on-insulator (SOI) p+/p-well/n+ diode temperature sensor, which can operate in an extremely wide temperature range of 80Â K to 1050Â K. The thermodiode is placed underneath a tungsten micro-heater which is embedded in a thin dielectric membrane, obtained with a post-CMOS deep reactive ion etching process. Analytical and numerical models are used to support experimental findings. Non-linearity, sensitivity and methods for their reduction and enhancement, respectively, are investigated in detail.
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Authors
A. De Luca, V. Pathirana, S.Z. Ali, D. Dragomirescu, F. Udrea,