| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7138191 | Sensors and Actuators A: Physical | 2012 | 5 Pages |
Abstract
The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
A. Fantoni, P. Louro, M.A. Vieira, T. Silva, M. Vieira,