Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7138487 | Sensors and Actuators A: Physical | 2012 | 10 Pages |
Abstract
The measured resonant frequencies decreased with decreasing connection arm width and agreed with those of the simulation results. The hysteresis of the frequency response at a large deflection was reduced by approximately one half in the L-shaped arm structure as compared to that within the straight arm structure when the connection arm width was designed so that the resonant frequencies of each arm were equal. The optical beam deflection of the L-shaped arm structure for an applied voltage of 2 Vp-p was 20% higher than that for the straight arm structure when the connection arm width was over 800 μm. These results indicate that the L-shaped arm structure decreases the hysteresis range by one half and increases the driving efficiency by 20%, even though the device chip size and the other scanner characteristics remained unchanged from those of the straight arm structure.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Takayuki Iseki, Mikio Okumura, Takashi Sugawara, Minoru K. Kurosawa,