Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150181 | Solid-State Electronics | 2018 | 7 Pages |
Abstract
The paper overviews experimental and theoretical studies of photogalvanic effects induced in BiSbTe-based three dimensional topological insulators by polarized terahertz radiation. We present the state-of-the-art of this subject, including most recent and well-established results. We discuss a phenomenological theory based on symmetry arguments and models illustrating the photocurrents origin. We give a brief glimpse of the underlying microscopic theory, as well as an overview of the main experimental results.
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Authors
Helene Plank, Sergey D. Ganichev,