Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles

Current-voltage (I-V) properties of indium-tin-oxide/Ag nanoparticles embedded in polyurethane film/Al devices exhibited a current bistability with ON/OFF ratio within the range of 105-103 with the variation of voltage from −0.85 to 3.95 V, which was nearly 102 larger than that for the device without Ag nanoparticles. The memory margin was obviously enlarged due to the existence of the Ag nanoparticles embedded in the polyurethane layer. I-V properties and write-read-erase-read voltage cycles test indicated the flash resistive switching properties. The data retention time reach up to 1.8 × 104 s, which manifested the stability of the memory devices. I-V property at ON state was attributed to the drift mechanism, and the property at OFF state was related to the space-charge-limited-current behaviors.