| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7150264 | Solid-State Electronics | 2018 | 11 Pages |
Abstract
A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters. In order to verify the validity and the accuracy of the numerical model, the calculation result from the model is verified through the device simulation result.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Yusuke Yamashita, Hiroshi Tadano,