Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150315 | Solid-State Electronics | 2018 | 4 Pages |
Abstract
In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12â¯nm, very large overshoot current (â¼60â¯mA) was observed and extremely low on-state resistance (â¼10â¯Î©) was achieved.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Min Tian, Huicai Zhong, Li Li, Zhigang Wang,