Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150376 | Solid-State Electronics | 2018 | 16 Pages |
Abstract
Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.
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Authors
Jonas Heidler, Sheng Yang, Xinliang Feng, Klaus Müllen, Kamal Asadi,