Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

In this work, Gate-All-Around Nanowire MOSFETs have been studied at very low temperatures. DC behaviors have been investigated in the linear operation and saturation regions, giving access to several analog parameters. Static characteristics at 4.2 K and low polarization exhibit step- like variations of the drain current, which can be linked to energy subband scattering. First results on the impact of quantum transport mechanism on the low frequency noise are shown. Finally the low frequency noise spectroscopy has led to the identification of silicon film traps.