Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150423 | Solid-State Electronics | 2018 | 5 Pages |
Abstract
A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14â¯nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11â¯nm thick InAs channel forms an 8.5â¯nm thick InAs leaving a 2.5â¯nm thick InAs channel on a p-type doped (1â¯Ãâ¯1016â¯cmâ3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rshâ¯=â¯90.9 Ω/sq which is in a good agreement with an experimental value of 97â¯Î©/sq.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
A.H. Mohamed, R. Oxland, M. Aldegunde, S.P. Hepplestone, P.V. Sushko, K. Kalna,