Article ID Journal Published Year Pages File Type
7150433 Solid-State Electronics 2018 6 Pages PDF
Abstract
HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10−9 A/cm2 at low reverse bias for passive mode and 2 × 10−4 A/cm2 at −8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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