Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150437 | Solid-State Electronics | 2018 | 5 Pages |
Abstract
The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by â¼2â¯dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.
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Authors
Payam Mehr, Xiong Zhang, William Lepkowski, Chaojiang Li, Trevor J. Thornton,