Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150452 | Solid-State Electronics | 2018 | 5 Pages |
Abstract
Based on the self-terminating gate recess technique, two different processes featuring gate-recess-first (GF) and ohmic-contact-first (OF) were proposed for E-mode Al2O3/GaN MOSFETs. Increased maximum drain current (Idmax) â¼30% (420 vs 325â¯mA/mm), field-effect mobility (μFEmax) â¼67% (150 vs 90â¯cm2/Vs) and reduced on-state resistance (Ron) â¼42% (9.7 vs 16.8â¯Î©Â·mm) were observed in the devices fabricated by GF process. Such significant performance difference of GF- and OF-devices resulted from the presence of border traps at Al2O3/GaN interface with a time constant â¼7â¯Ãâ¯10â6â¯s. Experimental results indicated that: (1) the near interface border traps in Al2O3 dielectric significantly affect device channel mobility; (2) a high temperature post-deposition annealing process could effective suppress generation of border traps.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Hongyue Wang, Jinyan Wang, Jingqian Liu, Yandong He, Maojun Wang, Min Yu, Wengang Wu,