Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150493 | Solid-State Electronics | 2018 | 22 Pages |
Abstract
Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Dae-Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo,