| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7150507 | Solid-State Electronics | 2018 | 4 Pages |
Abstract
We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48Â V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154Â V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.
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Authors
Dong Young Kim, Ogyun Seok, Himchan Park, Wook Bahng, Hyoung Woo Kim, Ki Cheol Park,