Article ID Journal Published Year Pages File Type
7150528 Solid-State Electronics 2018 6 Pages PDF
Abstract
Based on this proposed model, the 1200 V 4H-SiC P-shielding trench gate MOSFET was designed and optimized.
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Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics
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