| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7150547 | Solid-State Electronics | 2018 | 5 Pages |
Abstract
To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.
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Engineering
Electrical and Electronic Engineering
Authors
Do-Bin Kim, Dae Woong Kwon, Seunghyun Kim, Sang-Ho Lee, Byung-Gook Park,