Article ID Journal Published Year Pages File Type
7150556 Solid-State Electronics 2018 4 Pages PDF
Abstract
In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
Authors
, , , , , , ,