Article ID Journal Published Year Pages File Type
7150559 Solid-State Electronics 2018 5 Pages PDF
Abstract
The investigation of the Dual-k spacer through comparative analysis of single nanowire-FET(NWFET)/3-stack NWFET and underlap/overlap channel is conducted. It is known that the dug 3-stack NWFET has better delay characteristics than single NWFET with the use of high permittivity material of Cin in Dual-k spacer structure. In addition, there is no difference of delay between overlap and underlap channel when it used Dual-k spacer structure but underlap channel of Dual-k 3-stack NWFET shows better short channel immunity.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
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